Samsung

M474A1G43EB1-CTD - Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module

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SKU:
M474A1G43EB1-CTD
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
  • Samsung 8GB ECC Unbuffered DDR4-2666MHz PC4-21300 1.2V 260-Pin SODIMM Memory Module
MSRP: £178.00
£89.00
— You save £89.00

Description

Manufacturer Samsung
Manufacturer Part # M474A1G43EB1-CTD
Memory Type SODIMM
Capacity 8GB
Data Transfer Rate 2666MHz
Pins 260 Pin
Bus Type PC-21300
Error Correction ECC
Cycle Time 0.75ns
Cas CL19
Rank Rank 2
Voltage 1.2
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