Samsung

M474B1G73QH0-YK0 - Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory

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SKU:
M474B1G73QH0-YK0
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 8GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
MSRP: £372.00
£186.00
— You save £186.00

Description

Manufacturer Samsung
Manufacturer Part # M474B1G73QH0-YK0
Memory Type SODIMM
Capacity 8GB
Data Transfer Rate 1600Mhz
Pins 204 Pin
Bus Type PC-12800
Error Correction ECC
Cycle Time 1.25ns
Cas CL11
Memory Clock 200Mhz
Rank Rank 2
Voltage 1.35
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