Samsung

M474A1G43EB1-CRCQ - Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory

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SKU:
M474A1G43EB1-CRCQ
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
  • Samsung 8GB 2400MHz DDR4 PC4-19200 Unbuffered ECC CL17 260-Pin Sodimm 1.2V Dual Rank Memory
MSRP: £204.00
£102.00
— You save £102.00

Description

Manufacturer Samsung
Manufacturer Part # M474A1G43EB1-CRCQ
Memory Type SODIMM
Capacity 8GB
Data Transfer Rate 2400Mhz
Pins 260 Pin
Bus Type PC-19200
Error Correction ECC
Cycle Time 0.83ns
Cas CL17
Memory Clock 300Mhz
Rank Rank 2
Voltage 1.2
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