Samsung

M471B5273EB0-YKO - Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory

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SKU:
M471B5273EB0-YKO
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1600MHz DDR3 PC3-12800 Unbuffered non-ECC CL11 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
MSRP: £112.00
£56.00
— You save £56.00

Description

Manufacturer Samsung
Manufacturer Part # M471B5273EB0-YKO
Memory Type SODIMM
Capacity 4GB
Data Transfer Rate 1600Mhz
Pins 204 Pin
Bus Type PC-12800
Error Correction Non-ECC
Cycle Time 1.25ns
Cas CL11
Memory Clock 200Mhz
Rank Rank 2
Voltage 1.35
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