Samsung

M471B5273BH1-YF8 - Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory

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SKU:
M471B5273BH1-YF8
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
  • Samsung 4GB 1066MHz DDR3 PC3-8500 Unbuffered non-ECC CL7 204-Pin Sodimm 1.35V Low Voltage Dual Rank Memory
MSRP: £110.00
£55.00
— You save £55.00

Description

Manufacturer Samsung
Manufacturer Part # M471B5273BH1-YF8
Memory Type SODIMM
Capacity 4GB
Data Transfer Rate 1066Mhz
Pins 204 Pin
Bus Type PC-8500
Error Correction Non-ECC
Cycle Time 1.87ns
Cas CL7
Memory Clock 133Mhz
Rank Rank 2
Voltage 1.35
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