Samsung

M470T5267AH3-LE7 - Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory

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SKU:
M470T5267AH3-LE7
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
  • Samsung 4GB 800MHz DDR2 PC2-6400 Unbuffered non-ECC CL6 200-Pin Sodimm Dual Rank Memory
MSRP: £192.00
£96.00
— You save £96.00

Description

Manufacturer Samsung
Manufacturer Part # M470T5267AH3-LE7
Memory Type SODIMM
Capacity 4GB
Data Transfer Rate 800Mhz
Pins 200 Pin
Bus Type PC-6400
Error Correction Non-ECC
Cycle Time 5ns
Cas CL6
Memory Clock 200Mhz
Rank Rank 2
Voltage 1.8
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