Samsung

M470L2923BV0-CB0 - Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory

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SKU:
M470L2923BV0-CB0
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
  • Samsung 1GB 266MHz DDR PC2100 Unbuffered non-ECC CL2.5 200-Pin Sodimm Memory
MSRP: £102.00
£51.00
— You save £51.00

Description

Manufacturer Samsung
Manufacturer Part # M470L2923BV0-CB0
Memory Type SODIMM
Capacity 1GB
Data Transfer Rate 266Mhz
Pins 200 Pin
Bus Type PC-2100
Error Correction Non-ECC
Cycle Time 7.5ns
Cas CL2.5
Memory Clock 133Mhz
Voltage 2.5
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