Samsung

M312L5628MT0-CB0Q0 - Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory

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SKU:
M312L5628MT0-CB0Q0
Condition:
Refurbished
Availability:
IN STOCK
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
  • Samsung 2GB 266MHz DDR PC2100 Registered ECC CL2.5 184-Pin DIMM Memory
MSRP: £80.00
£40.00
— You save £40.00

Description

Manufacturer Samsung
Manufacturer Part # M312L5628MT0-CB0Q0
Memory Type DDR SDRAM
Capacity 2GB
Data Transfer Rate 266Mhz
Pins 184 Pin
Bus Type PC-2100
Error Correction Registered ECC
Cycle Time 7.5ns
Cas CL2.5
Memory Clock 133Mhz
Voltage 2.5
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