Hitachi

HUSMR3216ASS205 - Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive

(No reviews yet) Write a Review
SKU:
HUSMR3216ASS205
Condition:
Refurbished
Availability:
IN STOCK
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 1.6TB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
MSRP: £578.00
£289.00
— You save £289.00

Description

Model
Manufacturer Hitachi
Manufacturer Part # HUSMR3216ASS205
Performance
Product Type Internal Solid State Drive
Form Factor 2.5-inch
Capacity 1.6 TB
Flash Memory Technology Multi-level Cell (MLC)
Random Read IOPS 400000
Random Write IOPS 170000
MTBF 2500000 Hour(s)
Drive Interface Type SAS 12.0 Gbps
Other Information
Features
  • Read Intensive
  • FIPS-TCG Encryption
  • Power Loss Data Management
  • T10 end-to-end Data Protection
  • Reduced Field Replacement Effort
  • Protection Against Flash Die Failure
  • Enhanced Error Detection And Correction
  • Assures Data Integrity During Power Failure
  • View AllClose