HGST

HUSMM1616ASS200 - HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)

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SKU:
HUSMM1616ASS200
Condition:
Refurbished
Availability:
IN STOCK
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
  • HGST UltraStar SSD1600MM 1.6TB SAS 12Gb/s 2.5 inch Multi Level Cell (MLC) Enterprise Solid State Drive (SSD)
MSRP: £448.00
£224.00
— You save £224.00

Description

Model
Manufacturer Hitachi
Manufacturer Part # HUSMM1616ASS200
Performance
Product Type Internal Solid State Drive
Form Factor 2.5-inch
Capacity 1.6 TB
Flash Memory Technology Multi-level Cell (MLC)
Random Read IOPS 130000
Random Write IOPS 100000
MTBF 2500000 Hour(s)
Drive Interface Type SAS 12.0 Gbps
Other Information
Features
  • Crypto Sanitize
  • Mainstream Endurance
  • Power Loss Data Management
  • T10 End-to-End Data Protection
  • Protection Against Flash Die Failure
  • Enhanced Error Detection and Correction
  • Assures Data Integrity During Power Failure
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