Hitachi

0B35001 - Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)

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SKU:
0B35001
Condition:
Refurbished
Availability:
IN STOCK
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
  • Hitachi Ultrastar SS300 1.6TB Multi Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5 inch Solid State Drive (SSD)
MSRP: £2,030.00
£1,015.00
— You save £1,015.00

Description

Model
Manufacturer Hitachi
Manufacturer Part # 0B35001
Performance
Product Type Internal Solid State Drive
Form Factor 2.5-inch
Capacity 1.6 TB
Flash Memory Technology Multi-level Cell (MLC)
Random Read IOPS 400000
Random Write IOPS 170000
MTBF 2500000 Hour(s)
Drive Interface Type SAS 12.0 Gb/s
Other Information
Features
  • Read Intensive
  • FIPS-TCG Encryption
  • Power Loss Data Management
  • T10 end-to-end Data Protection
  • Reduced Field Replacement Effort
  • Protection Against Flash Die Failure
  • Enhanced Error Detection And Correction
  • Assures Data Integrity During Power Failure
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