Hitachi

0B34991 - Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive

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SKU:
0B34991
Condition:
Refurbished
Availability:
IN STOCK
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
  • Hitachi Ultrastar SS300 400GB Multi-Level Cell (MLC) SAS 12Gb/s Mainstream Endurance 2.5-inch Solid State Drive
MSRP: £418.00
£209.00
— You save £209.00

Description

Model
Manufacturer Hitachi
Manufacturer Part # 0B34991
Performance
Product Type Internal Solid State Drive
Form Factor 2.5-inch
Capacity 400 GB
Flash Memory Technology Multi-level Cell (MLC)
Random Read IOPS 400000
Random Write IOPS 200000
MTBF 2500000 Hour(s)
Drive Interface Type SAS 12.0 Gb/s
Other Information
Features
  • FIPS-TCG Encryption
  • Mainstream Endurance
  • Power Loss Data Management
  • T10 end-to-end Data Protection
  • Reduced Field Replacement Effort
  • Protection Against Flash Die Failure
  • Enhanced Error Detection And Correction
  • Assures Data Integrity During Power Failure
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