Hitachi

0B32231 - Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive

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SKU:
0B32231
Condition:
Refurbished
Availability:
IN STOCK
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
  • Hitachi Ultrastar SSD1600MR 250GB Multi-Level Cell (MLC) SAS 12Gb/s Read Intensive 2.5-inch Solid State Drive
MSRP: £300.00
£150.00
— You save £150.00

Description

Model
Manufacturer Hitachi
Manufacturer Part # 0B32231
Performance
Product Type Internal Solid State Drive
Form Factor 2.5-inch
Capacity 250 GB
Flash Memory Technology Multi-level Cell (MLC)
Random Read IOPS 130000
Random Write IOPS 30000
MTBF 2500000 Hour(s)
Drive Interface Type SAS 12.0 Gb/s
Other Information
Features
  • TCG Encryption
  • Read-Intensive
  • Power Loss Data Management
  • T10 End-to-End Data Protection
  • Protection Against Flash Die Failure
  • Enhanced Error Detection and Correction
  • Assures Data Integrity During Power Failure
  • View AllClose